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W9864G6JT 1 m ? ? publication release date: dec. 2 3 , 2011 - 1 - revision a 0 1 table of contents - 1. general description ................................ ................................ ................................ .............. 3 2. features ................................ ................................ ................................ ................................ ...... 3 3. available part number ................................ ................................ ................................ .......... 3 4. ball configuration ................................ ................................ ................................ ................. 4 5. ball description ................................ ................................ ................................ ...................... 5 6. block diagram ................................ ................................ ................................ ........................... 6 7. functional descripti on ................................ ................................ ................................ ........ 7 7.1 power up and initialization ................................ ................................ ................................ . 7 7.2 programming mode register ................................ ................................ .............................. 7 7.3 bank activate command ................................ ................................ ................................ .... 7 7.4 read and write access modes ................................ ................................ .......................... 7 7.5 burst read command ................................ ................................ ................................ ........ 8 7.6 burst write command ................................ ................................ ................................ ......... 8 7.7 read interrupted by a read ................................ ................................ ................................ 8 7.8 read interrupted by a write ................................ ................................ ................................ 8 7.9 write interrupted by a write ................................ ................................ ................................ 8 7.10 write interrupted by a read ................................ ................................ ................................ 8 7.11 burst stop command ................................ ................................ ................................ .......... 9 7.12 addre ssing sequence of sequential mode ................................ ................................ ......... 9 7.13 addressing sequence of interleave mode ................................ ................................ .......... 9 7.14 auto - precharge command ................................ ................................ ................................ 10 7.15 precharge command ................................ ................................ ................................ ........ 10 7.16 self refresh command ................................ ................................ ................................ ..... 10 7.17 power down mode ................................ ................................ ................................ ............ 11 7.18 no operation command ................................ ................................ ................................ ... 11 7.19 deselect command ................................ ................................ ................................ .......... 11 7.20 clock suspend mode ................................ ................................ ................................ ........ 11 8. opera tion mode ................................ ................................ ................................ ...................... 12 9. electrical character istics ................................ ................................ ............................. 13 9.1 absolute maximum ratings ................................ ................................ .............................. 13 9.2 recommended dc operating conditions ................................ ................................ ........ 13 www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 2 - revision a 0 1 9.3 capacitance ................................ ................................ ................................ ...................... 13 9.4 dc characteristics ................................ ................................ ................................ ............ 14 9.5 ac characteristics and operating condition ................................ ................................ .... 15 10. timing waveforms ................................ ................................ ................................ .................. 17 10.1 command input timing ................................ ................................ ................................ ..... 17 10.2 read timing ................................ ................................ ................................ ...................... 18 10.3 control timing of input/output data ................................ ................................ ................. 19 10.4 mode register set cycle ................................ ................................ ................................ .. 20 11. operating timing exa mple ................................ ................................ ................................ .. 21 11.1 interleaved bank read (burst length = 4, cas latency = 3) ................................ .......... 21 11.2 interleaved bank read (burst length = 4, cas latency = 3, auto - precharge) ............... 22 11.3 interleaved ban k read (burst length = 8, cas latency = 3) ................................ .......... 23 11.4 interleaved bank read (burst length = 8, cas latency = 3, auto - precharge) ............... 24 11.5 interleaved bank write (burst length = 8) ................................ ................................ ....... 25 11.6 interleaved bank write (burst length = 8, auto - precharge) ................................ ............ 26 11.7 page mode read (burst length = 4, cas latency = 3) ................................ ................... 27 11.8 page mode read / write (burst length = 8, cas latency = 3) ................................ ....... 28 11.9 auto precharge read (burst length = 4, cas latency = 3) ................................ ............ 29 11.10 auto precharge write (burst length = 4) ................................ ................................ ......... 30 11.11 auto refresh cycle ................................ ................................ ................................ ........... 31 11.12 self refresh cycle ................................ ................................ ................................ ............ 32 11.13 burst read and single write (burst length = 4, cas latency = 3) ................................ . 33 11.14 power down mode ................................ ................................ ................................ ............ 34 11.15 auto - precharge timing (read cycle) ................................ ................................ ............... 35 11.16 auto - precharge timing (write cycle) ................................ ................................ ............... 36 11.17 timing chart of read to write cycle ................................ ................................ ................ 37 11.18 timing chart of write to read cycle ................................ ................................ ................ 37 11.19 timing chart of burst stop cycle (burst stop command) ................................ ............... 38 11.20 timing chart of burst stop cycle (precharge command) ................................ ................ 38 11.21 cke/dqm input timing (write cycle) ................................ ................................ .............. 39 11.22 cke/dqm input timing (read cycle) ................................ ................................ .............. 40 12. package specificatio n ................................ ................................ ................................ ......... 41 12.1 tfbga 54 ball (8x8 mm 2 , ball pitch:0.8mm, ? =0.45mm) ................................ ................ 41 13. revision history ................................ ................................ ................................ ..................... 42 www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 3 - revision a 0 1 1. general description W9864G6JT is a high - speed synchronous dynamic random access memory (sdram), organized as 1 m words ? 4 banks ? 16 bits. W9864G6JT deliv ers a data bandwidth of up to 166 m words per second. for different application, W9864G6JT is sorted into the following speed grades : - 6 , - 6 i , - 6a and - 6k . t he y are compliant to the 166m h z/cl3 specification . - 6i industrial grade and - 6a automotive grade which is guaranteed to support - 40 c t a 85 c . the - 6k automotive grade, if offered, has two simultaneous requirements: ambient temperature (t a ) surrounding the device cannot be less than - 40c or greater than +105c, and the case temperature (t case ) cannot be less than - 40c or greater than +105c. accesses to the sdram are burst oriented. consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an active command. column addresses are automatically generated by the sdram internal counter in burst operation. random column read is also possible by providing i ts address at each clock cycle. the multiple bank nature enables interleaving among internal banks to hide the prechar ging time. by having a programmable mode register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W9864G6JT is ideal for main memory in high performance applications. 2. features ? 3.3v ? 0.3v powe r supply ? up to 166 mhz clock frequency ? 1 ,0 48 , 576 words ? 4 banks ? 16 bits organization ? self refresh mode ? cas latency: 2 and 3 ? burst length: 1, 2, 4, 8 and full page ? sequential and interleave b urst ? burst read, single writes mode ? byte data controlled by ldq m, udqm ? auto - precharge and controlled precharge ? 4k refresh cycles / 64 ms , @ - 40 c t a / t case 85 c ? 4k refresh cycles/ 16 ms , @ 85 c < t a / t case 105 c ? interface: lvttl ? packaged in tf bga 54 ball ( 8 x 8 mm 2 ) , using l ead free materials with rohs compliant ? n ot support self refresh function with t a / t case > 85 c 3. available part numbe r part number speed self refresh current (max.) operating temperature W9864G6JT - 6 166m hz /cl3 2 ma 0 c ~ 70 c W9864G6JT - 6 i 166m hz /cl3 2 ma - 4 0 c ~ 85 c W9864G6JT - 6a 1 66 m hz /cl3 2 ma - 4 0 c ~ 85 c W9864G6JT - 6k 1 66 m hz /cl3 5 ma - 4 0 c ~ 105 c www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 4 - revision a 0 1 4. ball configuration a 5 a 7 a 9 d q 0 n c v s s a 4 a 8 a 1 1 a 2 a 3 b s 0 / c s c k e v d d a 1 b s 1 / c a s 1 2 6 5 7 9 8 4 3 c b a g d e h f j v d d q v s s q d q 3 d q 5 / w e d q 1 3 d q 8 d q 1 2 d q 1 0 v d d q d q 2 d q 7 v d d v s s a 1 0 a 0 a 6 / r a s v d d d q 1 d q 4 v d d q d q 6 v s s q l d q m v s s q u d q m c l k v s s d q 1 5 d q 1 4 d q 1 1 v s s q d q 9 v d d q n c t o p v i e w www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 5 - revision a 0 1 5. ball description ball l ocation ball name function description h7 , h8 , j8 , j7 , j3 , j2 , h3 , h 2, h1 , g3 , h9 , g2 a0 ? a11 address multiplexed pins for row and column address. row address: a0 ? a11. column address: a0 ? a 7 . a10 is sampled during a precharge command to determine if all banks are to be precharged or bank selected by bs0, bs1. g7 , g8 bs0, bs1 bank select select bank to activate during row address latch time, or bank to read/write during address latch time. a 8 , b 9 , b8 , c9 , c8 , d9 , d8 , e9 , e 1 , d2 , d 1, c 2 , c 1, b2 , b 1, a2 dq0 ? dq15 data input/ output multiplexed pins for data output and input. g9 chip select disable or enable the command decoder. when command decoder is disabled, new command is ignored and previous operation continues. f8 row address strobe command input. when sampled at the rising edge of the clock , and defin e the operation to be executed. f 7 column address strobe referred to f9 write enable referred to f1 , e8 udqm , ldqm input/output mask the output buffer is placed at hi - z (with latency of 2) when dqm is sampled high in read cycle. in write cycle, sampling dqm high will block the write operation with zero latency. f 2 clk clock inputs system clock used to sample inputs on the rising edge of clock. f3 cke clock enable cke controls the clock activation and deactivation. when cke is low, power down mode, suspend mode, or self refresh mode is entered. a 9 , e7 , j9 v dd power power for input buffers and logic circuit inside dram. a1, e3 , j 1 v ss ground ground for input buffers and logic circuit inside dram. a7 , b3, c 7 , d3 v ddq power for i/o buffer separated power from v dd , to improve dq noise immunity. a3 , b7 , c3 , d7 v ssq ground for i/o buffer separated ground from v ss , to improve dq noise immunity. e 2, g 1 nc no connection no connection . cs ras cas we www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 6 - revision a 0 1 6. block diagram dq0 dq15 udqm ldqm clk cke a10 clock buffer command decoder address buffer refresh count er column count er cont ro l sig nal g enerato r mode regist er column decoder sense amplifier cell array bank #2 column decoder sense amplifier cell array bank #0 column decoder sense amplifier cell array bank #3 dat a cont rol circuit dq buffer column decoder sense amplifier cell array bank #1 note: the cell array configuration is 4096 * 256 * 16 row decoder row decoder row decoder row decoder a0 a9 bs0 bs1 cs ras cas we a11 www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 7 - revision a 0 1 7. f unctional d escription 7.1 power up and initialization the default power up state of the mode register is unspecified. the following power up and initialization sequence need to be followed to guarantee the device being preconditioned to each user specific needs. during power up, all v dd and v dd q pins must be ramp up simultaneously to the specified voltage when the input signa ls are held in the nop state. the power up voltage must not exceed v dd +0.3v on any of the input pins or v dd supplies. after power up, an initial pause of 200 s is required followed by a precharge of all banks using the precharge command. to prevent data contention on the dq bus during power up, it is required that the dqm and cke pins be held high during the i nitial pause period. once all banks have been precharged, the mode register set command must be issued to initialize the mode register. an additional eight auto refresh cycles (cbr) are also required before or after programming the mode register to ensure proper subsequent operation. 7.2 programming mode register after initial power up, the mode register set command must be issued for proper device operation. all banks must be in a precharged state and cke must be high at least one cycle before the mode registe r set command can be issued. the mode register set command is activated by the low signals of , , and at the positive edge of the clock. the address input data during this cycle defines the parameters to be set as shown in the mode register operation table. a new command may be issued following the mode register set command once a delay equal to t rsc has elapsed. please refer to the next page for mode register set cycl e and operation table. 7.3 bank activate command the bank activate command must be applied before any read or write operation can be executed. the operation is similar to activate in edo dram. the delay from when the bank activate comman d is applied to when the first read or write operation can begin must not be less than the ras to cas delay time (t rcd ). once a bank has been activated it must be precharged before another bank activate command can be issued to the same bank. the minimum t ime interval between successive bank activate commands to the same bank is determined by the ras cycle time of the device (t rc ). the minimum time interval between interleaved bank activate commands (bank a to bank b and vice versa) is the bank to bank dela y time (t rrd ). the maximum time that each bank can be held active is specified as t ras (max). 7.4 read and write access modes after a bank has been activated , a read or write cycle can be followed. this is accomplished by setting high an d low at the clock rising edge after minimum of t rcd delay. pin voltage level defines whether the access cycle is a read operation ( high), or a write operation ( low). the address inputs determine the starting column address. reading or writing to a different row within an activated bank requires the bank be precharged and a new bank activate command be issued. when more than one bank is activated, interleaved ban k read or write operations are possible. by using the programmed burst length and alternating the access and precharge operations between multiple banks, seamless data access operation among many different pages can be realized. read or write commands can also be issued to the same bank or between active banks on every clock cycle. cs ras cas we ras www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 8 - revision a 0 1 7.5 burst read command the burst read command is initiated by applying logic low level to and while holding and high at the rising edge of the clock. the address inputs determine the starting column address for the burst. the mode register sets type of burst (sequential or interleave) and the burst length (1, 2, 4, 8, full page) during the mode register set up cycle. table 2 and 3 in the next page explain the address sequence of interleave mode and sequential mode. 7.6 burst write command the burst write command is initiated by applying logic low level to , and while holding high at the rising edge of the clock. the address inputs determine the starting column address. data for the first burst write cycle must be applied on the dq pins on the same clock cycle t hat the write command is issued. the remaining data inputs must be supplied on each subsequent rising clock edge until the burst length is completed. data supplied to the dq pins after burst finishes will be ignored. 7.7 read interrupted by a read a burst read may be interrupted by another read command. when the previous burst is interrupted, the remaining addresses are overridden by the new read address with the full burst length. the data from the first read command continues to appear on the outp uts until the cas l atency from the interrupting read command the is satisfied. 7.8 read interrupted by a write to interrupt a burst read with a write command, dqm may be needed to place the dqs (output drivers) in a high impedance state to avoid data contentio n on the dq bus. if a read command will issue data on the first and second clocks cycles of the write operation, dqm is needed to insure the dqs are tri - stated. after that point the write command will have control of the dq bus and dqm masking is no longer needed. 7.9 write interrupted by a write a burst write may be interrupted before completion of the burst by another write command. when the previous burst is interrupted, the remaining addresses are overridden by the new address and data will be written into the device until the programmed burst length is satisfied. 7.10 write interrupted by a read a read command will interrupt a burst write operation on the same clock cycle that the read command is activated. the dqs must be in the high impedance state at least on e cycle before the new read data appears on the outputs to avoid data contention. when the read command is activated, any residual data from the burst write cycle will be ignored. cs ras cas we www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 9 - revision a 0 1 7.11 burst stop command a burst stop command may be used to terminate the existi ng burst operation but leave the bank open for future read or write commands to the same page of the active bank, if the burst length is full page. use of the burst stop command during other burst length operations is illegal. the burst stop command is def ined by having and high with and low at the rising edge of the clock. the data dqs go to a high impedance state after a delay which is equal to the cas latency in a burst read cycle interrupted by burst stop. 7.12 addressing sequence of sequential mode a column access is performed by increasi ng the address from the column address which is input to the device. the disturb address is varied by the burst length as shown in table 2 . table 2 address sequence of sequential mode d ata access address burst length data 0 n bl = 2 (disturb address is a0) data 1 n + 1 no address carry from a0 to a1 data 2 n + 2 bl = 4 (disturb addresses are a0 and a1) data 3 n + 3 no address carry from a1 to a2 data 4 n + 4 data 5 n + 5 bl = 8 (disturb addresses are a0, a1 and a2) data 6 n + 6 no address carry from a2 to a3 data 7 n + 7 7.13 addressing sequence of interleave mode a column access is started in the input column address and is performed by inverting the address bit in the sequence shown in table 3. table 3 address sequence of interleave mode d ata access address burst length data 0 a8 a7 a6 a5 a4 a3 a2 a1 a0 bl = 2 data 1 a8 a7 a6 a5 a4 a3 a2 a1 data 2 a8 a7 a6 a5 a4 a3 a2 a0 bl = 4 data 3 a8 a7 a6 a5 a4 a3 a2 data 4 a8 a7 a6 a5 a4 a3 a1 a0 bl = 8 data 5 a8 a7 a6 a5 a4 a3 a1 data 6 a8 a7 a6 a5 a4 a3 a0 data 7 a8 a7 a6 a5 a4 a3 cs ras cas we a0 a1 a2 a2 www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 10 - revision a 0 1 7.14 auto - p recharge command if a10 is set to high when the read or write command is issued, then the auto - precharge function is entered. during auto - precharge, a read command will execute as normal with the exception that the active bank will begin to precharge automatically before a ll burst read cycles have been completed. regardless of burst length, it will begin a certain number of clocks prior to the end of the scheduled burst cycle. the number of clocks is determined by cas l atency. a read or write command with auto - precharge can not be interrupted before the entire burst operation is completed. therefore, use of a read, write or precharge command is prohibited during a read or write cycle with auto - precharge. once the precharge operation has started, the bank cannot be reactivate d until the precharge time (t rp ) has been satisfied. issue of auto - precharge command is illegal if the burst is set to full page length. if a10 is high when a write command is issued, the write with auto - precharge function is initiated. the sdram automatic ally enters the precharge operation two clock s delay from the last burst write cycle. this delay is referred to as write t wr . the bank undergoing auto - precharge can not be reactivated until t wr and t rp are satisfied. this is referred to as t dal , data - in to active delay (t dal = t wr + t rp ). when using the auto - precharge command, the interval between the bank activate command and the beginning of the internal precharge operation must satisfy t ras (min). 7.15 precharge command the precharge command is used to precharge or close a bank that has been activated. the precharge command is entered when , and are low and is high at the rising edg e of the clock. the precharge command can be used to precharge each bank separately or all banks simultaneously. three address bits, a10, bs0, and bs1, are used to define which bank(s) is to be precharged when the command is issued. after the precharge com mand is issued, the precharged bank must be reactivated before a new read or write access can be executed. the delay between the precharge command and the activate command must be greater than or equal to the precharge time (t rp ). 7.16 self refresh command the self refresh command is defined by having , , and cke held low with high at the rising edge of the clock. all banks must be idle prior to issuing the self refresh com mand. once the command is registered, cke must be held low to keep the device in self refresh mode. when the sdram has entered self refresh mode all of the external control signals, except cke, are disabled. the clock is internally disabled during self ref resh operation to save power. the device will exit self refresh operation after cke is returned high. any subsequent commands can be issued after t xsr from the end of self refresh c ommand . if, during normal operation, auto refresh cycles are issued in burs ts (as opposed to being evenly distributed), a burst of 4,096 auto refresh cycles should be completed just prior to entering and just after exiting the self refresh mode. cs ras cas we www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 11 - revision a 0 1 7.17 power down mode the power down mode is initiated by holding cke low. all of the rece iver circuits except cke are gated off to reduce the power. the power down mode does not perform any refresh operations, therefore the device can not remain in power down mode longer than the refresh period (t ref ) of the device. the power down mode is exit ed by bringing cke high. when cke goes high, a no operation command is required on the next rising clock edge, depending on t ck . the input buffers need to be enabled with cke held high for a period equal to t cks (min) + t ck (min). 7.18 no operation command the no operation command should be used in cases when the sdram is in a idle or a wait state to prevent the sdram from registering any unwanted commands between operations. a no operation command is registered when is low with , , and held high at the rising edge of the clock. a no operation command will not terminate a previous operation that is still executing, such as a burst read or write cycle. 7.19 deselect comma nd the deselect command performs the same function as a no operation command. deselect command occurs when is brought high, the , , and signals become dont cares. 7.20 cl ock suspend mode during normal access mode, cke must be held high enabling the clock. when cke is registered low while at least one of the banks is active, clock suspend mode is entered. the clock suspend mode deactivates the internal clock and suspends an y clocked operation that was currently being executed. there is a one clock delay between the registration of cke low and the time at which the sdram operation suspends. while in clock suspend mode, the sdram ignores any new commands that are issued. the c lock suspend mode is exited by bringing cke high. there is a one clock cycle delay from when cke returns high to whe n clock suspend mode is exited. cs ras cas we www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 12 - revision a 0 1 8. o peration m ode fully synchronous operations are performed to latch the commands at the positive edges of clk. table 1 shows the truth table for the operation commands. table 1 truth table (note (1), (2)) c ommand d e v ic e s tate cken - 1 cken dqm bs0, 1 a10 a0 ? a9 a11 bank active idle h x x v v v l l h h bank precharge any h x x v l x l l h l precharge all any h x x x h x l l h l write active (3) h x x v l v l h l l write with auto - precharge active (3) h x x v h v l h l l read active (3) h x x v l v l h l h read with auto - precharge active (3) h x x v h v l h l h mode register set idle h x x v v v l l l l no C operation any h x x x x x l h h h burst stop active (4) h x x x x x l h h l device deselect any h x x x x x h x x x auto - refresh idle h h x x x x l l l h self - refresh entry idle h l x x x x l l l h self refresh exit idle (s.r.) l l h h x x x x x x x x h l x h x h x x x clock suspend mode entry active h l x x x x x x x x power down mode entry idle active (5) h h l l x x x x x x x x h l x h x h x x x clock suspend mode exit active l h x x x x x x x x power down mode exit any (power down) l l h h x x x x x x x x h l x h x h x x data write/output enable active h x l x x x x x x x data write/output disable active h x h x x x x x x x notes: (1) v = valid x = dont care l = low level h = high level (2) cken signal is input level when commands are provided. cken - 1 signal is the input level one clock cycle before the command is issued. (3) these are state of bank designated by bs0, bs1 signals. (4) device state is full page burst operation. (5) power down mode can not be entered in the burst cycle. when this command asserts in the burst cycle, device state is clock suspend mode. cs ras cas we www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 13 - revision a 0 1 9. electrical characteristics 9.1 a bsolute m aximum r atings p arameter s ymbol r ating u nit notes voltage on any pin relative to v ss v in, v out - 0. 5 ~ v dd + 0. 5 ( ? 4.6v max.) v 1 voltage on v dd /v ddq supply relative to v ss v dd , v ddq - 0. 5 ~ 4.6 v 1 operating temperature for - 6 t a 0 ~ 70 c 1 , 2 operating temperature for - 6i / - 6a t a - 4 0 ~ 85 c 1 , 2 operating temperature for - 6 k t a - 4 0 ~ 105 c 1, 2 operating temperature for - 6 k t case - 4 0 ~ 105 c 1, 3, 4, 5, 6 storage temperature t stg - 55 ~ 150 c 1 soldering temperature (10s) t solder 260 c 1 power dissipation p d 1 w 1 short circuit output current i out 50 ma 1 note s : 1. exposure to conditions beyond those listed under absolute maximum ratings may adversely affect the life and reliability of the device 2. operating ambient temperature is the surrounding temperature of the s dram . 3. operating case t emperature is the case surface temperature on the center/top side of the s dram 4. supporting - 4 0 c t a / t case 85 c with full ac and dc specifications . 5. supporting - 4 0 c t a / t case 85 c and being able to extend to 10 5c with extend a uto r efresh commands in frequency to a 16 m s period ( t ref = 3.9 s ). 6. during operation, the dram operation temperature must be maintained between - 40 to 10 5c for a utomotive parts under all specification parameters. 9.2 recommended dc operating conditi ons p arameter s ym. m in . t yp . m ax . u nit notes power supply voltage v dd 3.0 3.3 3.6 v 2 power supply voltage (for i/o buffer) v ddq 3.0 3.3 3.6 v 2 input high voltage v ih 2.0 - v dd + 0.3 v 2 input low voltage v il - 0.3 - 0.8 v 2 note : v ih (max) = v dd / v dd q +1. 5 v for pulse width < 5 ns v il (min) = v ss / v ss q - 1. 5 v for pulse width < 5 ns 9.3 capacitance ( v dd = 3.3v ? 0.3v , f = 1 mhz, t a = 25 c ) p arameter s ym. m in . m ax . u nit input capacitance (a0 to a11, bs0, bs1, , , , , cke) c i 1 2.5 4 pf input capacitance (clk) c clk 2.5 4 pf input/output capacitance (dq0 ? dq15) c o 4 6.5 pf input capacitance dqm c i 2 3.0 5. 5 pf note : these parameters are periodically sampled and not 100% tested. cs ras cas we www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 14 - revision a 0 1 9.4 dc characteristics (v dd = 3.3v ? 0.3v, t a = 0 to 70 c for - 6 , t a = - 40 to 85 c for - 6i/ - 6a , t a / t case = - 40 to 105 c for - 6 k ) p arameter s ym . max. u nit n otes - 6/ - 6i/ - 6a - 6k operating curren t t ck = min., t rc = min. active precharge command cycling without burst operation 1 b ank o peration i dd1 50 50 3 standby curren t t ck = min., = v ih v i h /l = v ih (min.) / v il (max.) bank: inactive state cke = v ih i dd2 25 25 3 cke = v il (power d own mode) i dd2p 2 5 3 standby curren t clk = v il , = v ih v ih/l = v ih (min.) / v il (max.) bank: inactive state cke = v ih i dd2s 12 12 cke = v il (power d own mode) i dd2ps 2 5 ma no operating current t ck = min., = v ih (min.) bank: active state ( 4 b anks) cke = v ih i dd3 35 35 cke = v il (power down mode) i dd3p 12 15 burst operating current ( t ck = min.) read/ write command cycling i dd4 75 75 3, 4 auto refresh current ( t ck = min.) auto refresh command cycling i dd5 60 60 3 self refresh current (cke = 0.2v) self refresh mode i dd6 2 5 p arameter sym . m in . m ax . u nit n otes input leakage current (0v ? v in ? v dd , all other pins not under test = 0v) i i(l) - 5 5 a output leakage current (output disable , 0v ? v out ? v dd q ) i o(l) - 5 5 a lvttl output h level voltage (i out = - 2 ma ) v oh 2.4 - v lvttl output l level voltage (i out = 2 ma ) v ol - 0.4 v cs www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 15 - revision a 0 1 9.5 ac characteristics and operating condition (v dd = 3.3v ? 0.3v, t a = 0 to 70 c for - 6 , t a = - 40 to 85 c for - 6i/ - 6a , t a / t case = - 40 to 105 c for - 6 k ) (notes: 5, 6) parameter sym . - 6/ - 6i/ - 6a - 6k u nit n otes m in . m ax . m in . m ax . ref/active to ref/active command period t rc 60 60 ns active to precharge command period t ras 4 2 100000 4 2 100000 active to read/write command delay time t rcd 15 18 read/write(a) to read/write(b)command period t ccd 1 1 t ck precharge to active(b) command period t rp 15 18 ns active(a) to active(b) command period t r r d 1 2 12 write recovery time cl* = 2 t wr 2 2 t ck cl* = 3 2 2 clk cycle time cl* = 2 t ck 7.5 1000 7.5 1000 ns cl* = 3 6 1000 6 1000 clk high level width t ch 2 2 8 clk low level width t cl 2 2 8 access time from clk cl* = 2 t ac 6 6 9 cl* = 3 5 5 output data hold time t oh 3 9 output data high impedance time t hz 6 6 7 o utput data low impedance time t lz 0 0 9 power down mode entry time t sb 6 6 transition time of clk (rise and fall) t t 1 1 data - in - set - up time t ds 1.5 1.5 8 data - in hold time t dh 1 1 8 address set - up time t as 1.5 1.5 8 address hold time t ah 1 1 8 cke set - up time t cks 1.5 1.5 8 cke hold time t ckh 1 1 8 command set - up time t cms 1.5 1.5 8 command hold tim e t cmh 1 1 8 refresh time (4k/refresh cycles) - 4 0 c a / t case 85 t ref 64 64 ms 85 c < t a / t case t ref a -- 16 ms mode register set cycle time t rsc 2 2 t ck e x it self refresh to active command t xsr 72 72 ns *cl = cas latency * -- = not support www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 16 - revision a 0 1 notes: 1. operation exceeds absolute maximum ratings may cause permanent damage to the devices . 2. all voltages are referenced to v ss . 3. these parameters depend on the cycle rate and listed values are measured at a cycle rate with the minimum values of t ck and t rc . 4. these parameters depend on the output loading co nditions. specified values are obtained with output open . 5. power up sequence is further described in the functional description section . 6. ac test load diagram . 7. t hz defines the time at which the outputs achieve the open circui t condition and is not referenced to output level . 8. assumed input rise and fall time (t t ) = 1n s . if tr & tf is longer than 1n s , transient time compensation should be considered, i.e., [(tr + tf)/2 - 1]ns s hould be added to the parameter . 9. if clock rising time (t t ) is longer than 1ns, (t t /2 - 0.5)ns should be added to the parameter . 50 ohms 1.4 v ac test load z = 50 ohms output 30pf www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 17 - revision a 0 1 10. timing waveforms 10.1 command input timing c l k a 0 - a 1 1 b s 0 , 1 v i h v i l t c m h t c m s t c h t c l t t t t t c k s t c k h t c k h t c k s t c k s t c k h c s r a s c a s w e c k e t c m s t c m h t c m s t c m h t c m s t c m h t c m s t c m h t a s t a h t c k www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 18 - revision a 0 1 10.2 read timing r e a d c a s l a t e n c y t a c t l z t a c t o h t h z t o h b u r s t l e n g t h r e a d c o m m a n d c l k c s r a s c a s w e a 0 - a 1 1 b s 0 , 1 d q v a l i d d a t a - o u t v a l i d d a t a - o u t www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 19 - revision a 0 1 10.3 control timing of input/output data t c m h t c m s t c m h t c m s t d s t d h t d s t d h t d s t d h t d s t d h v a l i d d a t a - o u t v a l i d d a t a - o u t v a l i d d a t a - o u t v a l i d d a t a - i n v a l i d d a t a - i n v a l i d d a t a - i n v a l i d d a t a - i n t c k h t c k s t c k h t c k s t d s t d h t d s t d h t d h t d s t d s t d h v a l i d d a t a - i n v a l i d d a t a - i n v a l i d d a t a - i n v a l i d d a t a - i n t c m h t c m s t c m h t c m s t o h t a c t o h t a c t o h t h z o p e n t l z t a c t o h t a c t c k h t c k s t c k h t c k s t o h t a c t o h t a c t o h t a c t o h t a c v a l i d d a t a - o u t v a l i d d a t a - o u t v a l i d d a t a - o u t c l k d q m d q 0 ~ 1 5 ( w o r d m a s k ) ( c l o c k m a s k ) c l k c k e d q 0 ~ 1 5 c l k c o n t r o l t i m i n g o f i n p u t d a t a c o n t r o l t i m i n g o f o u t p u t d a t a ( o u t p u t e n a b l e ) ( c l o c k m a s k ) d q m d q 0 ~ 1 5 c k e c l k d q 0 ~ 1 5 www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 20 - revision a 0 1 10.4 mode register set cycle a 0 a 3 a d d r e s s i n g m o d e 0 s e q u e n t i a l 1 i n t e r l e a v e a 0 a 9 s i n g l e w r i t e m o d e 0 b u r s t r e a d a n d b u r s t w r i t e 1 b u r s t r e a d a n d s i n g l e w r i t e a 0 a 2 a 1 a 0 a 0 0 0 0 a 0 0 0 1 a 0 0 1 0 a 0 0 1 1 a 0 1 0 0 a 0 1 0 1 a 0 1 1 0 a 0 1 1 1 b u r s t l e n g t h s e q u e n t i a l i n t e r l e a v e 1 1 2 2 4 4 8 8 r e s e r v e d r e s e r v e d f u l l p a g e c a s l a t e n c y r e s e r v e d r e s e r v e d 2 3 r e s e r v e d a 0 a 6 a 5 a 4 a 0 0 0 0 a 0 0 1 0 a 0 0 1 1 a 0 1 0 0 a 0 0 0 1 * " r e s e r v e d " s h o u l d s t a y " 0 " d u r i n g m r s c y c l e . t r s c t c m s t c m h t c m s t c m h t c m s t c m h t c m s t c m h t a s t a h c l k c s r a s c a s w e a 0 - a 1 1 b s 0 , 1 r e g i s t e r s e t d a t a n e x t c o m m a n d a 0 a 1 a 2 a 3 a 4 a 5 a 6 b u r s t l e n g t h a d d r e s s i n g m o d e c a s l a t e n c y ( t e s t m o d e ) a 8 a 0 a 7 a 9 a 0 w r i t e m o d e a 1 0 b s 0 a 0 a 1 1 " 0 " " 0 " " 0 " " 0 " " 0 " r e s e r v e d b s 1 " 0 " r e s e r v e d www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 21 - revision a 0 1 11. operating timing exa mple 11.1 interleaved bank read (burst length = 4, cas latency = 3) 0 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 1 9 2 0 2 1 2 2 2 3 c l k d q c k e d q m a 0 - a 9 , a 1 1 a 1 0 w e c s t r c t r c t r c t r c t r a s t r p t r a s t r p t r p t r a s t r a s t r c d t r c d t r c d t r c d t a c t a c t a c t a c t r r d t r r d t r r d t r r d a c t i v e r e a d a c t i v e r e a d a c t i v e a c t i v e a c t i v e r e a d r e a d p r e c h a r g e p r e c h a r g e p r e c h a r g e r a a r b b r a c r b d r a e r a a c a w r b b c b x r a c c a y r b d c b z r a e a w 0 a w 1 a w 2 a w 3 b x 0 b x 1 b x 2 b x 3 c y 0 c y 1 c y 2 c y 3 r a s c a s b s 1 b s 0 b a n k # 0 i d l e b a n k # 1 b a n k # 2 b a n k # 3 www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 22 - revision a 0 1 11.2 interleaved bank read (burst length = 4, cas latency = 3, auto - precharge) 0 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 1 9 2 0 2 1 2 2 2 3 c l k c k e d q m a 0 - a 9 , a 1 1 a 1 0 b s 1 w e c a s r a s c s b s 0 t r c t r c t r c t r a s t r p t r a s t r p t r a s t r p t r c d t r c d t r c d t a c t a c t a c t a c t r r d t r r d t r r d t r r d a c t i v e r e a d a c t i v e r e a d a c t i v e a c t i v e a c t i v e r e a d r e a d t r c r a a r a c r b d r a e d q a w 0 a w 1 a w 2 a w 3 b x 0 b x 1 b x 2 b x 3 c y 0 c y 1 c y 2 c y 3 d z 0 * a p i s t h e i n t e r n a l p r e c h a r g e s t a r t t i m i n g a p * a p * r a a c a w r b b c b x r a c c a y r b d r a e c b z r b b a p * t r c d b a n k # 0 i d l e b a n k # 1 b a n k # 2 b a n k # 3 www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 23 - revision a 0 1 11.3 interleaved bank read (burst length = 8, cas latency = 3) 0 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 1 9 2 0 2 1 2 2 2 3 t r c t r a s t r p t r p t r a s t r c d t r c d t r c d t r r d t r r d r a a r a a c a x r b b r b b c b y r a c r a c c a z a x 0 a x 1 a x 2 a x 3 a x 4 a x 5 a x 6 b y 0 b y 1 b y 4 b y 5 b y 6 b y 7 c z 0 c l k d q c k e d q m a 0 - a 9 , a 1 1 a 1 0 b s 1 w e c a s r a s c s a c t i v e r e a d p r e c h a r g e a c t i v e r e a d p r e c h a r g e a c t i v e t a c t a c r e a d p r e c h a r g e t a c b s 0 b a n k # 0 i d l e b a n k # 1 b a n k # 2 b a n k # 3 www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 24 - revision a 0 1 11.4 interleaved bank read (burst length = 8, cas latency = 3, auto - precharge) a 0 - a 9 , a 1 1 0 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 1 9 2 0 2 1 2 2 2 3 t r c t r a s t r p t r a s t r c d t r c d t r c d t r r d t r r d a x 0 a x 1 a x 2 a x 3 a x 4 a x 5 a x 6 a x 7 b y 0 b y 1 b y 4 b y 5 b y 6 c z 0 r a a r a a c a x r b b r b b c b y r a c r a c c a z * a p i s t h e i n t e r n a l p r e c h a r g e s t a r t t i m i n g a c t i v e r e a d a c t i v e a c t i v e r e a d t a c t a c t a c c l k d q c k e d q m a 1 0 w e c a s r a s c s r e a d a p * a p * b s 1 b s 0 t r a s t r p b a n k # 0 i d l e b a n k # 1 b a n k # 2 b a n k # 3 www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 25 - revision a 0 1 11.5 interleaved bank write (burst length = 8) 0 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 1 9 2 0 2 1 2 2 2 3 t r c t r a s t r p t r a s t r c d t r c d t r c d t r r d t r r d r a a r a a c a x r b b r b b c b y r a c r a c c a z a x 0 a x 1 b y 4 b y 5 b y 6 b y 7 c z 0 c z 1 c z 2 w r i t e p r e c h a r g e a c t i v e a c t i v e w r i t e p r e c h a r g e a c t i v e w r i t e c l k d q c k e d q m a 0 - a 9 , a 1 1 a 1 0 b s 1 w e c a s r a s c s i d l e b a n k # 0 b a n k # 1 b a n k # 2 b a n k # 3 b s 0 a x 4 a x 5 a x 6 a x 7 b y 0 b y 1 b y 2 b y 3 www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 26 - revision a 0 1 11.6 interleaved bank write (burst length = 8, auto - precharge) 0 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 1 9 2 0 2 1 2 2 2 3 t r c t r a s t r p t r a s t r c d t r c d t r c d t r r d t r r d r a a r a a c a x r b b r b b c b y r a b r a c a x 0 a x 1 a x 4 a x 5 a x 6 a x 7 b y 0 b y 1 b y 2 b y 3 b y 4 b y 5 b y 6 b y 7 c z 0 c z 1 c z 2 c a z * a p i s t h e i n t e r n a l p r e c h a r g e s t a r t t i m i n g c l k d q c k e d q m a 0 - a 9 , a 1 1 a 1 0 b s 1 w e c a s r a s c s a c t i v e w r i t e w r i t e a c t i v e b a n k # 0 i d l e b a n k # 1 b a n k # 2 b a n k # 3 a p * a c t i v e w r i t e a p * b s 0 www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 27 - revision a 0 1 11.7 page mode read (burst length = 4, cas latency = 3) 0 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 1 9 2 0 2 1 2 2 2 3 t c c d t c c d t c c d t r a s t r a s t r c d t r c d t r r d r a a r a a c a i r b b r b b c b x c a y c a m c b z a 0 a 1 a 2 a 3 b x 0 b x 1 a y 0 a y 1 a y 2 a m 0 a m 1 a m 2 b z 0 b z 1 b z 2 b z 3 * a p i s t h e i n t e r n a l p r e c h a r g e s t a r t t i m i n g c l k d q c k e d q m a 0 - a 9 , a 1 1 a 1 0 b s 1 w e c a s r a s c s a c t i v e r e a d a c t i v e r e a d r e a d r e a d r e a d p r e c h a r g e t a c t a c t a c t a c t a c b a n k # 0 i d l e b a n k # 1 b a n k # 2 b a n k # 3 a p * b s 0 www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 28 - revision a 0 1 11.8 page mode read / write (burst length = 8, cas latency = 3) 0 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 1 9 2 0 2 1 2 2 2 3 t r a s t r c d t w r r a a r a a c a x c a y a x 0 a x 1 a x 2 a x 3 a x 4 a x 5 a y 1 a y 0 a y 2 a y 4 a y 3 q q q q q q d d d d d c l k d q c k e d q m a 0 - a 9 , a 1 1 a 1 0 b s 1 w e c a s r a s c s a c t i v e r e a d w r i t e p r e c h a r g e t a c b a n k # 0 i d l e b a n k # 1 b a n k # 2 b a n k # 3 b s 0 www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 29 - revision a 0 1 11.9 auto precharge read (burst length = 4, cas latency = 3) 0 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 1 9 2 0 2 1 2 2 2 3 c l k d q c k e d q m a 0 - a 9 , a 1 1 a 1 0 w e c a s r a s c s b s 1 t r c t r a s t r p t r a s t r c d t r c d t a c t a c a c t i v e r e a d a p * a c t i v e r e a d a p * r a a r a b r a a c a w r a b c a x a w 0 a w 1 a w 2 a w 3 * a p i s t h e i n t e r n a l p r e c h a r g e s t a r t t i m i n g b a n k # 0 i d l e b a n k # 1 b a n k # 2 b a n k # 3 b s 0 b x 0 b x 2 b x 1 b x 3 www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 30 - revision a 0 1 11.10 auto precharge write (burst length = 4) 0 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 1 9 2 0 2 1 2 2 2 3 c l k d q c k e d q m a 0 - a 9 , a 1 1 a 1 0 w e c a s r a s c s b s 1 t r c t r c t r p t r a s t r p r a a t r c d t r c d r a b r a c r a a r a b c a x r a c b x 0 b x 1 b x 2 b x 3 a c t i v e a c t i v e w r i t e a p * a c t i v e w r i t e a p * * a p i s t h e i n t e r n a l p r e c h a r g e s t a r t t i m i n g b a n k # 0 i d l e b a n k # 1 b a n k # 2 b a n k # 3 t r a s b s 0 c a w a w 0 a w 1 a w 2 a w 3 www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 31 - revision a 0 1 11.11 auto refresh cycle 0 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 1 9 2 0 2 1 2 2 2 3 a l l b a n k s p r e c h a g e a u t o r e f r e s h a u t o r e f r e s h ( a r b i t r a r y c y c l e ) t r c t r p t r c c l k d q c k e d q m a 0 - a 9 , a 1 1 a 1 0 w e c a s r a s c s b s 0 , 1 www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 32 - revision a 0 1 11.12 self refresh cycle c l k d q c k e d q m a 0 - a 9 , a 1 1 a 1 0 b s 0 , 1 w e c a s r a s c s t c k s t s b t c k s a l l b a n k s p r e c h a r g e s e l f r e f r e s h e n t r y a r b i t r a r y c y c l e t r p s e l f r e f r e s h c y c l e t x s r n o o p e r a t i o n / c o m m a n d i n h i b i t s e l f r e f r e s h e x i t www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 33 - revision a 0 1 11.13 burst read and single write (burst length = 4, cas latency = 3) 0 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 1 9 2 0 2 1 2 2 2 3 c l k c s r a s c a s w e b s 1 b s 0 a 1 0 a 0 - a 9 , a 1 1 d q m c k e d q t r c d r b a r b a c b v c b w c b x c b y c b z a v 0 a v 1 a v 2 a v 3 a w 0 a x 0 a y 0 a z 0 a z 1 a z 2 a z 3 q q q q d d d q q q q t a c t a c r e a d r e a d s i n g l e w r i t e a c t i v e b a n k # 0 i d l e b a n k # 1 b a n k # 2 b a n k # 3 www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 34 - revision a 0 1 11.14 power down mode 0 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 1 9 2 0 2 1 2 2 2 3 r a a c a a r a a c a x r a a r a a a x 0 a x 1 a x 2 a x 3 t s b t c k s t c k s t c k s t s b t c k s a c t i v e s t a n d b y p o w e r d o w n m o d e p r e c h a r g e s t a n d b y p o w e r d o w n m o d e a c t i v e n o p p r e c h a r g e n o p a c t i v e n o t e : t h e p o w e r d o w n m o d e i s e n t e r e d b y a s s e r t i n g c k e " l o w " . a l l i n p u t / o u t p u t b u f f e r s ( e x c e p t c k e b u f f e r s ) a r e t u r n e d o f f i n t h e p o w e r d o w n m o d e . w h e n c k e g o e s h i g h , c o m m a n d i n p u t m u s t b e n o o p e r a t i o n a t n e x t c l k r i s i n g e d g e . v i o l a t i n g r e f r e s h r e q u i r e m e n t s d u r i n g p o w e r - d o w n m a y r e s u l t i n a l o s s o f d a t a . c l k d q c k e d q m a 0 - a 9 , a 1 1 a 1 0 b s w e c a s r a s c s r e a d www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 35 - revision a 0 1 11.15 auto - precharge timing (read cycle) read ap 0 11 10 9 8 7 6 5 4 3 2 1 q0 q0 read ap act q1 read ap act q1 q2 ap act read act q0 q3 (1) cas latency =2 read act ap when the auto precharge command is asserted, the period from bank activate command to the start of internal precgarging must be at least t ras (min). represents the read w ith auto precharge command. represents the start of internal precharging. represents the bank activate command. note ) t rp t rp t rp ( a ) burst length = 1 command ( b ) burst length = 2 command ( c ) burst length = 4 command ( d ) burst length = 8 command dq dq dq dq q0 q1 q2 q3 q4 q5 q6 q7 t rp ( a ) burst length = 1 command ( b ) burst length = 2 command ( c ) burst length = 4 command ( d ) burst length = 8 command dq dq dq dq q0 read ap act q0 read ap act q1 q0 read ap act q1 q2 q3 read ap act q0 q1 q2 q3 q4 q5 q6 q7 (2) cas latency =3 t rp t rp t rp t rp www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 36 - revision a 0 1 11.16 auto - precharge timing (write cycle) act 0 1 3 2 (1) cas latency = 2 (a) burst length = 1 dq 4 5 7 6 8 9 11 10 write d0 act ap command (b) burst length = 2 dq write d0 act ap command trp trp d1 (c) burst length = 4 dq write d0 act ap command trp d1 (d) burst length = 8 dq write d0 act ap command trp d1 d2 d3 d2 d3 d4 d5 d6 d7 (2) cas latency = 3 (a) burst length = 1 dq write d0 act ap command (b) burst length = 2 dq write d0 act ap command trp trp d1 (c) burst length = 4 dq write d0 act ap command trp d1 (d) burst length = 8 dq write d0 ap command trp d1 d2 d3 d2 d3 d4 d5 d6 d7 twr twr twr twr twr twr twr twr 12 act represents the write with auto precharge command. represents the start of internal precharing. represents the bank activ e command. write ap act act when the /auto precharge command is asserted,the period f rom bank activ ate command to the start of intermal precgarging must be at least tras (min). note ) clk www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 37 - revision a 0 1 11.17 timing chart of read to write cycle 11.18 timing chart of write to read cycle note: the output data must be masked by dqm to avoid i/o conflict 11 10 9 8 7 6 5 4 3 2 1 0 (1) cas latency=2 in the case of burst length = 4 read read write write dq dq ( b ) c ommand d qm d qm d0 d1 d2 d3 d0 d1 d2 d3 ( a ) c ommand (2) cas latency=3 read write read write d0 d1 d2 d3 ( a ) c ommand dq dq d qm ( b ) c ommand d qm d0 d1 d2 d3 read write 0 11 10 9 8 7 6 5 4 3 2 1 q0 read q1 q2 q3 read read write write q0 q1 q2 q3 write q0 q1 q2 q3 d0 d1 dq dq ( a ) c ommand dq dq d qm ( b ) c ommand d qm ( a ) c ommand ( b ) c ommand d qm d qm in the case of burst length=4 (1) cas latency=2 (2) cas latency=3 d0 d0 d1 q0 q1 q2 q3 d0 www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 38 - revision a 0 1 11.19 timing chart of burst stop cycle (burst stop command) 11.20 timing chart of burst stop cycle (precharge command) read bst 0 11 10 9 8 7 6 5 4 3 2 1 dq q0 q1 q2 q3 bst ( a ) cas latency =2 command ( b )cas latency = 3 (1) read cycle q4 (2) w rite cycle command read command q0 q1 q2 q3 q4 q0 q1 q2 q3 q4 dq dq write bst note: represents the burst stop command bst 0 1 11 10 9 8 7 6 5 4 3 2 ( 1 ) read cycle ( a ) cas latency = 2 command q 0 q 1 q 2 q 3 q 4 prcg read ( b ) cas latency = 3 command q 0 q 1 q 2 q 3 q 4 prcg read dq dq ( 2 ) write cycle command q 0 q 1 q 2 q 3 q 4 prcg write dq dqm twr www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 39 - revision a 0 1 11.21 cke/dqm input timing (write cycle) 7 6 5 4 3 2 1 cke mask ( 1 ) d1 d6 d5 d3 d2 clk cy cle no. external internal cke dqm dq 7 6 5 4 3 2 1 ( 2 ) d1 d6 d5 d3 d2 clk cy cle no. external internal cke dqm dq 7 6 5 4 3 2 1 ( 3 ) d1 d6 d5 d4 d3 d2 clk cy cle no. external cke dqm dq dqm mask dqm mask cke mask cke mask internal clk clk clk www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 40 - revision a 0 1 11.22 cke/dqm input timing (read cycle) 7 6 5 4 3 2 1 ( 1 ) q1 q6 q4 q3 q2 clk cycle no. external internal cke dqm dq open open 7 6 5 4 3 2 1 q1 q6 q3 q2 clk cycle no. external internal cke dqm dq open ( 2 ) 7 6 5 4 3 2 1 q1 q6 q2 clk cycle no. external internal cke dqm dq q5 q4 ( 3 ) q4 clk clk clk q3 www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 41 - revision a 0 1 12. package specificatio n 12.1 tfbga 54 ball (8x 8 mm 2 , ball pitch:0.8mm, ? =0.45mm ) a b c d f e g h j b x 5 4 e a 1 i n d e x a a 1 s e 1 2 3 7 8 9 a 1 i n d e x b a l l l a n d b a l l o p e n i n g n o t e : 1 . b a l l l a n d : 0 . 5 m m 2 . b a l l o p e n i n g : 0 . 4 m m 3 . p c b b a l l l a n d s u g g e s t e d 0 . 4 m m d 1 b a 0 . 1 5 ( 4 x ) s y m b o l d i m e n s i o n ( m m ) m i n . n o m . m a x . a a 1 b d d 1 e e 1 s e s d 6 . 4 0 b s c . 1 . 6 0 t y p . 0 . 8 0 t y p . 7 . 9 0 8 . 0 0 8 . 1 0 6 . 4 0 b s c . 1 . 2 0 0 . 4 0 0 . 5 0 8 . 1 0 8 . 0 0 7 . 9 0 0 . 4 0 0 . 2 8 - - - 0 . 4 5 - - - - - - a c m 0 . 1 5 b 0 . 8 0 b s c . c m 0 . 0 8 d s d e e 1 e a b c d f e g h j 9 8 7 3 2 1 e d i m e n s i o n ( i n c h ) m i n . n o m . m a x . 0 . 2 5 2 b s c . 0 . 0 6 3 t y p . 0 . 0 3 1 t y p . 0 . 3 1 1 0 . 3 1 5 0 . 3 1 9 0 . 2 5 2 b s c . 0 . 0 4 7 0 . 0 1 6 0 . 0 2 0 0 . 3 1 9 0 . 3 1 5 0 . 3 1 1 0 . 0 1 6 0 . 0 1 0 - - - 0 . 0 1 8 - - - - - - 0 . 0 3 1 b s c . www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G6JT publication release date: dec. 2 3 , 2011 - 42 - revision a 0 1 13. revision histor y v ersion d ate p age d escription a 0 1 dec. 2 3 , 2011 all initial formal data shee t important notice winbond products are not designed, intended, authorized or warranted for use as components in systems or equipment intended for surgical implantation, atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, or for other applications intended to support or sustain life. further more, winbond products are not int ended for applications wherein failure of winbond products could result or lead to a situation wherein personal injury, death or severe property or environmental damage could occur. winbond customers using or selling these products for use in such applicat ions do so at their own risk and agree to fully indemnify winbond for any damages resulting from such improper use or sales. www.datasheet.co.kr datasheet pdf - http://www..net/

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